A Mixed Flash Translation Layer Structure for SLC-MLC Combined Flash Memory System
نویسندگان
چکیده
NAND flash memory is a nonvolatile storage that is often used for its advantages of small size, non-mechanical, shock resistance, and low power consumption. With the recent drop in its price, NAND flash memory is on the verge of taking place of hard disk drive. Depending on the number of bits stored in a single cell, flash memory can be divided into SLC (single-level cell) NAND and MLC (multi-level cell) NAND. The SLC NAND has faster transfer speed and higher cell endurance than MLC NAND flash memory. The only disadvantage of SLC is its manufacturing cost per megabyte. In this paper, we propose the SLC-MLC mixed flash translation layer with 3-slot block mapping method for block level address translation and block relocation algorithm. The simulation result shows high writing performance, performing 92 percent SLC speed even though 70 percent of the proposed design consists of MLC NAND.
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